详情
BUY TM4E1G31H6ZRBI https://www.utsource.net/itm/p/8656756.html
| Parameter |
Description |
Value |
Unit |
| Part Number |
Full part number |
TM4E1G31H6ZRBI |
|
| Type |
Device type |
DDR4 SDRAM |
|
| Capacity |
Storage capacity |
1 Gb |
|
| Organization |
Memory organization |
x32 |
|
| Voltage (Vdd) |
Supply voltage |
1.2 V |
Volts |
| Speed |
Data rate |
3200 MT/s |
Megatransfers/second |
| CAS Latency |
Column Address Strobe latency |
22, 24 |
|
| Operating Temp. |
Operating temperature range |
-40 to +85 |
°C |
| Package |
Package type |
BGA |
|
| Pin Count |
Number of pins |
78 |
|
| ECC |
Error Correction Code |
No |
|
| Refresh |
Refresh mode |
Auto-refresh |
|
Instructions for Use:
Power Supply Requirements:
- Ensure the supply voltage (Vdd) is set to 1.2V. Incorrect voltage can damage the device.
Signal Integrity:
- Maintain proper signal integrity by using controlled impedance traces and ensuring adequate bypass capacitors are placed close to the power pins.
Initialization:
- Follow the initialization sequence as specified in the JEDEC DDR4 standard. This includes setting up the memory controller with correct timing parameters like CAS latency.
Operating Temperature:
- Operate the device within the specified temperature range (-40°C to +85°C). Exceeding these limits can lead to unreliable operation or failure.
Handling:
- Handle the component with care to avoid ESD damage. Use appropriate anti-static measures when handling or installing the component.
Mounting:
- Mount the component on a PCB designed for BGA packages with a 78-pin configuration. Ensure the PCB design matches the pinout of the TM4E1G31H6ZRBI.
Testing:
- After installation, thoroughly test the memory to ensure it operates correctly under all conditions, including stress testing at the boundaries of operating parameters.
(For reference only)
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