2SK1221: 马来西亚的首选 Utsource Holding Company Limited

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N-Channel Silicon Power MOS-FET

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source On-Resistance	Rds(on)	Vgs = 10V, Id = 1A	-	2.5	4.0	Ω
Gate Threshold Voltage	Vgs(th)	Id = 0.25mA	1.0	1.5	2.0	V
Maximum Drain Current	Id	Tc = 25°C	-	-	10	A
Maximum Gate-source Voltage	Vgs	Continuous	-	-	±20	V
Maximum Drain-source Voltage	Vds	Continuous	-	-	60	V
Power Dissipation	Ptot	Tc = 25°C	-	-	35	W
Junction Temperature	Tj	-	-	-	150	°C

Handling Precautions:
- Avoid exceeding the maximum ratings listed in the table to prevent damage.
- Handle with care to avoid static discharge which can damage the device.
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation limits.
- Follow manufacturer guidelines for mounting torque and thermal interface materials.
Operation:
- Keep junction temperature within specified limits to ensure reliable operation.
- Operate within the gate threshold voltage range to control the device effectively.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready to use to minimize exposure to ESD.
Testing:
- Perform initial testing at lower voltages and currents to verify correct operation before full-scale application.
- Use appropriate safety equipment and procedures when testing high voltage or current circuits.

(For reference only)