HGTG20N60B3D

HGTG20N60B3D

分类: Elec-component 当前有货 (数量:9999999)
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Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage V CES 600 V Maximum collector-emitter voltage
Gate-Emitter Voltage V GES ±20 V Maximum gate-emitter voltage
Collector Current I C 20 A Continuous collector current
Power Dissipation P T 180 W Total power dissipation
Junction Temperature T J -55 175 °C Operating junction temperature range
Storage Temperature T STG -55 175 °C Storage temperature range
Thermal Resistance R TH 0.9 °C/W Junction to case thermal resistance

Instructions for HGTG20N60B3D:

  1. Handling and Storage:

    • Store in a dry environment within the specified storage temperature range.
    • Handle with care to avoid mechanical damage.
  2. Installation:

    • Ensure correct orientation during installation to prevent short circuits.
    • Use appropriate heat sinks to manage thermal resistance and maintain operating temperatures within limits.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage or gate-emitter voltage to avoid damaging the device.
    • Monitor the continuous collector current and ensure it does not surpass the rated value.
    • Keep the junction temperature within the specified operating range to ensure reliable performance.
  4. Electrical Connections:

    • Connect the gate, emitter, and collector terminals accurately as per the circuit diagram.
    • Apply gate signals carefully to avoid exceeding the maximum gate-emitter voltage.
  5. Safety Precautions:

    • Always use protective equipment when handling high voltage components.
    • Follow all manufacturer guidelines to ensure safe operation and longevity of the device.
(For reference only)

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